MGF1601B |
RFQ for MGF1601B Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| MGF1601B | - | - | - |
The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.
Typical Application |
Features |
| ·S to X band medium-power amplifiers and oscillators. | • High output power at 1dB gain compression P1dB=21.8dBm(TYP.) @f=8GHz• High linear power gain GLP=8dB(TYP.) @f=8GHz |
| Parameter |
Symbol |
Ratings |
Unit |
| Gate to drain voltage |
VGDO |
-8 |
V |
| Gate to source voltage |
VGSO |
-8 |
V |
| Drain current |
ID |
250 |
mA |
| Reverse gate current |
IGR |
-0.6 |
mA |
| Forward gate current |
IGF |
1.5 |
mA |
| Total power dissipation *1 |
PT |
1.2 |
W |
| Channel temperature |
Tch |
175 |
°C |
| Storage temperature |
Tstg |
65 /+175 |
°C |
